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this is information on a product in full production. may 2014 docid023779 rev 2 1/22 VNP35N07-E, vnb35n07-e omnifet fully autoprotected power mosfet datasheet - production data features ? automotive qualified ? linear current limitation ? thermal shutdown ? short circuit protection ? integrated clamp ? low current drawn from input pin ? diagnostic feedback through input pin ? esd protection ? direct access to the gate of the power mosfet (analog driving) ? compatible with standard power mosfet ? standard to-220 package ? compliant with 2002/95/ec european directive description the VNP35N07-E and vnb35n07-e are monolithic devices made using stmicroelectronics vipower ? technology, intended for replacement of standard power mosfets in dc to 50 khz applications. built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. fault feedback can be detected by monitoring the voltage at the input pin. type v clamp r ds(on) i lim VNP35N07-E 70 v 0.028 35 a vnb35n07-e 70 v 0.028 35 a 1 2 3 to-220 1 3 d2pak table 1. device summary package order codes tube tape and reel to-220 VNP35N07-E vnp35n07tr-e d 2 pak vnb35n07-e vnb35n07tr-e www.st.com
contents VNP35N07-E, vnb35n07-e 2/22 docid023779 rev 2 contents 1 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 electrical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 absolute maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4 package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.1 to-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.2 d 2 pak package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
docid023779 rev 2 3/22 VNP35N07-E, vnb35n07-e list of tables 3 list of tables table 1. device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 table 2. absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 table 3. thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 table 4. off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 table 5. on . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 table 6. dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 table 7. switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 table 8. source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 table 9. protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 table 10. to-220 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 table 11. d 2 pak mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 table 12. document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
list of figures VNP35N07-E, vnb35n07-e 4/22 docid023779 rev 2 list of figures figure 1. block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 figure 2. switching times test circuits for resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 figure 3. input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 figure 4. unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 figure 5. test circuit for inductive load switching & diode recovery times . . . . . . . . . . . . . . . . . . . . . 10 figure 6. waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 figure 7. unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 8. thermal impedance for to-220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 9. derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 10. static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 11. static drain-source on resistance vs input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 12. output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 13. transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 14. static drain-source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 15. input charge vs input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 16. normalized on resistance vs temperature (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 17. normalized on resistance vs temperature (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 18. normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 19. capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 20. turn-on current slope (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 21. turn-on current slope (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 22. turn-off drain-source voltage slope (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 figure 23. turn-off drain-source voltage slope (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 figure 24. switching time resistive load (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 25. switching time resistive load (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 26. current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 27. source drain diode forward characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 figure 28. switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 29. step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 30. thermal impedance for d 2 pak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 31. to-220 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 figure 32. d 2 pak package dimensions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
docid023779 rev 2 5/22 VNP35N07-E, vnb35n07-e block diagram 21 1 block diagram figure 1. block diagram
electrical specification VNP35N07-E, vnb35n07-e 6/22 docid023779 rev 2 2 electrical specification 2.1 absolute maximum rating stressing the device above the rating listed in ta ble 3 may cause permanent damage to the device. these are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. exposure to the conditions in table below for extended periods may affect device reliability. 2.2 thermal data 2.3 electrical characteristics t case = 25c unless otherwise specified. table 2. absolute maximum ratings symbol parameter value unit d 2 pak to-220 v ds drain-source voltage (v in = 0) internally clamped v v in input voltage 18 v i d drain current internally limited a i r reverse dc output current -50 a v esd electrostatic discharge (c = 100 pf; r = 1.5 k )2000 v p tot total dissipation at t c = 25c 125 40 w t j operating junction temperature internally limited c t c case operating temperature internally limited c t stg storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit d 2 pak to-220 r thj-case thermal resistance junction-case (max) 1 3.12 c/w r thj-amb thermal resistance junction-ambient (max) 62.5 62.5 c/w table 4. off symbol parameter test conditions min typ max unit v clamp drain-source clamp voltage i d = 200 ma; v in = 0 v 60 70 80 v v clth drain-source clamp threshold voltage i d = 2 ma ; v in = 0 v 55 v
docid023779 rev 2 7/22 VNP35N07-E, vnb35n07-e electrical specification 21 v incl input-source reverse clamp voltage i in = -1 ma -1 -0.3 v i dss zero input voltage drain current (v in = 0 v) v ds = 13 v; v in = 0 v 50 ma v ds = 25 v; v in = 0 v 200 a i iss supply current from input pin v ds = 0 v; v in = 10 v 250 500 a table 5. on (1) 1. pulsed: pulse duration = 300 ms, duty cycle 1.5%. symbol parameter test conditions min typ max unit v in(th) input threshold voltage v ds = v in ; i d+ i in = 1 ma 0.8 ? 3 v r ds(on) static drain-source on resistance v in = 10 v ; i d = 18 a ? 0.028 ? v in = 5 v; i d = 18 a ? 0.035 ? table 6. dynamic symbol parameter test conditions min typ max unit g fs (1) 1. pulsed: pulse duration = 300 ms, duty cycle 1.5%. forward transconductance v ds = 13 v; i d = 18 a 20 25 s c oss output capacitance v ds = 13 v; f = 1 mhz; v in = 0 v 980 1400 pf table 7. switching (1) 1. parameters guaranteed by design/characterization. symbol parameter test conditions min typ max unit t d(on) turn-on delay time v dd = 28 v; i d = 18 a; v gen = 10 v; r gen = 10 (see figure 2 ) ?100200ns t r rise time ? 350 600 ns t d(off) turn-off delay time ? 650 1000 ns t f fall time ? 200 350 ns t d(on) turn-on delay time v dd = 28 v; i d = 18 a; v gen = 10 v; r gen = 1000 (see figure 2 ) ?500800 s t r rise time ? 2.7 4.2 s t d(off) turn-off delay time ? 10 16 s t f fall time ? 4.3 6.5 s (di/dt) on turn-on current slope v dd = 28 v; i d = 18 a; v in = 10 v; r gen = 10 ?60 a/ s q i total input charge v dd = 12 v; i d = 18 a; v in = 10 v ? 100 nc table 4. off (continued) symbol parameter test conditions min typ max unit
electrical specification VNP35N07-E, vnb35n07-e 8/22 docid023779 rev 2 figure 2. switching times test circuits for resistive load table 8. source drain diode symbol parameter test conditions min typ max unit v sd (1) 1. pulsed: pulse duration = 300 ms, duty cycle 1.5%. forward on voltage i sd = 18 a; v in = 0 v ? 1.6 v t rr (2) 2. parameters guaranteed by design/characterization. reverse recovery time i sd = 18 a; di/dt = 100 a/ s; v dd = 30 v; t j = 25 c (see figure 5 ) ?250 ns q rr (2) reverse recovery charge ? 1 c i rrm (2) reverse recovery current ? 8 a table 9. protection symbol parameter test conditions min typ max unit i lim drain current limit v in = 10 v; v ds = 13 v 253545 a v in = 5 v; v ds = 13 v 253545 a t dlim (1) 1. parameters guaranteed by design/characterization. step response current limit v in = 10 v 35 60 s v in = 5 v 70 140 s t jsh (1) overtemperature shutdown 150 c t jrs (1) overtemperature reset 135 c i gf (1) fault sink current v in = 10 v; v ds = 13 v 50 ma v in = 5 v; v ds = 13 v 20 ma e as (1) single pulse avalanche energy starting t j = 25 c; v dd = 20 v; v in = 10 v; r gen = 1 k ; l = 10 mh 2.5 j
docid023779 rev 2 9/22 VNP35N07-E, vnb35n07-e electrical specification 21 figure 3. input charge test circuit figure 4. unclamped inductive load test circuits
electrical specification VNP35N07-E, vnb35n07-e 10/22 docid023779 rev 2 figure 5. test circuit for inductive lo ad switching & diode recovery times figure 6. waveforms
docid023779 rev 2 11/22 VNP35N07-E, vnb35n07-e electrical specification 21 figure 7. unclamped inductive waveforms
electrical specification VNP35N07-E, vnb35n07-e 12/22 docid023779 rev 2 figure 8. thermal impedance for to-220 figure 9. derating curve figure 10. static drain-source on resistance figure 11. static drain-source on resistance vs input voltage figure 12. output characteristics figure 13. transconductance
docid023779 rev 2 13/22 VNP35N07-E, vnb35n07-e electrical specification 21 figure 14. static drain-source on resistance figure 15. input charge vs input voltage figure 16. normalized on resistance vs temperature (part 1) figure 17. normalized on resistance vs temperature (part 2) figure 18. normalized input threshold voltage vs temperature figure 19. capacitance variations
electrical specification VNP35N07-E, vnb35n07-e 14/22 docid023779 rev 2 figure 20. turn-on current slope (part 1) figure 21. turn-on current slope (part 2) figure 22. turn-off drain-source voltage slope (part 1) figure 23. turn-off drain-source voltage slope (part 2) figure 24. switching time resistive load (part 1) figure 25. switching time resistive load (part 2)
docid023779 rev 2 15/22 VNP35N07-E, vnb35n07-e electrical specification 21 figure 26. current limit vs junction temperature figure 27. source drain diode forward characteristics figure 28. switching time resistive load figure 29. step response current limit figure 30. thermal impedance for d 2 pak
protection features VNP35N07-E, vnb35n07-e 16/22 docid023779 rev 2 3 protection features during normal operation, the input pin is electrically connected to the gate of the internal power mosfet. the device then behaves like a standard power mosfet and can be used as a switch from dc to 50 khz. the only difference from the user?s standpoint is that a small dc current (i iss ) flows into the input pin in order to supply the internal circuitry. the device integrates: ? overvoltage clamp protection: internally set at 70v, along with the rugged avalanche characteristics of the power mosfet stage give this device unrivalled ruggedness and energy handling capability. this feature is mainly important when driving inductive loads. ? linear current limiter circuit: limits the drain current i d to i lim whatever the input pin voltage. when the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold t jsh . ? overtemperature and short circuit protection: these are based on sensing the chip temperature and are not dependent on the input voltage. the location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. overtemperature cutout occurs at minimum 150c. the device is automatically restarted when the chip temperature falls below 135c. ? status feedback: in the case of an overtemperature fault condition, a status feedback is provided through the input pin. the internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 . the failure can be detected by monitoring the voltage at the input pin, which will be close to ground potential. additional features of this devices are esd protection according to the human body model and the ability to be driven from a ttl logic circuit (with a small increase in r ds(on) ).
docid023779 rev 2 17/22 VNP35N07-E, vnb35n07-e package mechanical 21 4 package mechanical in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 to-220 package information table 10. to-220 mechanical data symbol millimeters min. typ max. a4.40 4.60 b0.61 0.88 b1 1.15 1.70 c0.49 0.70 d 15.25 15.75 e10 10.40 e24.0 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95 package weight 1.9gr. (typ.)
package mechanical VNP35N07-E, vnb35n07-e 18/22 docid023779 rev 2 figure 31. to-220 package dimensions ("1($'5
docid023779 rev 2 19/22 VNP35N07-E, vnb35n07-e package mechanical 21 4.2 d 2 pak package information table 11. d 2 pak mechanical data symbol millimeters min. typ max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical VNP35N07-E, vnb35n07-e 20/22 docid023779 rev 2 figure 32. d 2 pak package dimensions ("1($'5
docid023779 rev 2 21/22 VNP35N07-E, vnb35n07-e revision history 21 5 revision history table 12. document revision history date revision changes 09-jan-2014 1 initial release. 07-may-2014 2 added d 2 pak package and related details. table 2: absolute maximum ratings : ?p tot : updated value table 3: thermal data : ?r thj-case : updated value
VNP35N07-E, vnb35n07-e 22/22 docid023779 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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